پیش‌تقویت‌کننده کاملاً متعادل با هدایت انتقالی بهبود یافته بر پایه بافر ولتاژ تاخورده

نوع مقاله : علمی-پژوهشی

نویسندگان

1 Faculty of Electrical Engineering, Sahand University of Technology, Sahand New Town, Tabriz 5331817634, Iran

2 Iranian Space Research Center (ISRC), Tehran, Iran

چکیده

در این مقاله یک پیش‌تقویت‌کننده کاملاً متعادل با بهره بالا ارائه شده است. در ساختار پیشنهادی از بافر ولتاژ تاخورده استفاده شده تا یک ناقل جریان کوچک با امپدانس ورودی بسیار کم حاصل شود. سپس، این ناقل جریان به عنوان المان اصلی برای تحقق یک تقویت‌کننده تراهدایتی با بهره بالا و هدایت انتقالی بهبود یافته استفاده می‌شود. تقویت‌کننده ارائه شده برای استفاده به عنوان پیش‌تقویت‌کننده مناسب است. بهره بالای تقویت‌کننده، آن را برای استفاده در ساختار حلقه بسته برای رسیدن به دقت بالا یا قابلیت برنامه ریزی بسیار مناسب می سازد. ساختار پیشنهادی توان بسیار کم 150 نانووات را از ولتاژ تغذیه 0.6 ولت مصرف می‌کند. جانمایی مدار و شبیه‌سازی‌ آن در فناوری TSMC 180nm CMOS انجام شده است. بهره حلقه باز تقویت کننده 141.5 دسی‌بل بوده و در حلقه فیدبک با بهره 60 دسی‌بل، پهنای باند فرکانسی حدود 2.4 کیلوهرتز را نشان می‌دهد. اندازه خازن بار 5 پیکوفاراد انتخاب شده است. در ساختار پیشنهادی نسبت رد حالت مشترک و نسبت رد ولتاژ تغذیه به ترتیب برابر 148.3 دسی‌بل و 153.7 دسی‌بل است.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

An FVF-Based Gm-Enhanced fully balanced Preamplifier

نویسندگان [English]

  • H. Faraji Baghtash 1
  • M. Kargar 2
1 Faculty of Electrical Engineering, Sahand University of Technology, Sahand New Town, Tabriz 5331817634, Iran
2 Iranian Space Research Center (ISRC), Tehran, Iran
چکیده [English]

A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of 150nW from a 0.6V supply voltage.
The Spectre Post-layout simulations with TSMC 180nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of 141.5dB and 3-dB frequency bandwidth of 2.4kHz at 60dB closed-loop configuration. The load capacitance is set to be 5pF. The proposed structure also delivers high CMRR and PSRR values of 148.3dB and 153.7dB, respectively.

کلیدواژه‌ها [English]

  • FVF
  • OTA
  • Low Power
  • Low Voltage
  • CCII
  • preamplifier

مراجع

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مجله مهندسی برق دانشگاه تبریز
دوره 54، شماره 1 - شماره پیاپی 107
اردیبهشت 1403
صفحه 111-119

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