An FVF-Based Gm-Enhanced fully balanced Preamplifier

نوع مقاله : علمی-پژوهشی

نویسندگان

1 Faculty of Electrical Engineering, Sahand University of Technology, Sahand New Town, Tabriz 5331817634, Iran

2 Iranian Space Research Center (ISRC), Tehran, Iran

چکیده

A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of 150nW from a 0.6V supply voltage.
The Spectre Post-layout simulations with TSMC 180nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of 141.5dB and 3-dB frequency bandwidth of 2.4kHz at 60dB closed-loop configuration. The load capacitance is set to be 5pF. The proposed structure also delivers high CMRR and PSRR values of 148.3dB and 153.7dB, respectively.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

An FVF-Based Gm-Enhanced fully balanced Preamplifier

نویسندگان [English]

  • H. Faraji Baghtash 1
  • M. Kargar 2
1 Faculty of Electrical Engineering, Sahand University of Technology, Sahand New Town, Tabriz 5331817634, Iran
2 Iranian Space Research Center (ISRC), Tehran, Iran
چکیده [English]

A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of 150nW from a 0.6V supply voltage.
The Spectre Post-layout simulations with TSMC 180nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of 141.5dB and 3-dB frequency bandwidth of 2.4kHz at 60dB closed-loop configuration. The load capacitance is set to be 5pF. The proposed structure also delivers high CMRR and PSRR values of 148.3dB and 153.7dB, respectively.

کلیدواژه‌ها [English]

  • FVF
  • OTA
  • Low Power
  • Low Voltage
  • CCII
  • preamplifier

مراجع

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مجله مهندسی برق دانشگاه تبریز
دوره 54، شماره 1 - شماره پیاپی 107
اردیبهشت 1403
صفحه 111-119

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