ارزیابی عملکرد آنالوگ و پارامترهای اثر کانال کوتاه روی ترانزیستور اثر میدان بر پایه عایق توپولوژیک

نوع مقاله: علمی-پژوهشی

نویسندگان

1 گروه مهندسی نانوالکترونیک - پژوهشکده علوم و فناوری نانو - دانشگاه کاشان

2 دانشکده مهندسی برق و کامپیوتر - دانشگاه کاشان

3 دانشگاه فنی و حرفه‌ای - کاشان

چکیده

در راستای ارزیابی مواد جدید برای طراحی و شبیه سازی ترانزیستورهای اثر میدان در ابعاد نانومتری، در این مقاله ویژگی‌های الکترونیکی ترانزیستور اثر میدان بر پایه عایق توپولوژیک شبیه‌سازی و بررسی می‌گردد. از آنجا که گپ انرژی در ناحیه کانال این ترانزیستور با استفاده از میدان مغناطیسی عمود قابل‌تنظیم می‌باشد، ابتدا با رسم نمودار جریان بر حسب ولتاژ گیت به‌ازای مقادیر مختلف میدان مغناطیسی عمود، مشخصه‌های جریان مستقیم (DC Characteristics) همچون نسبت جریان روشن به جریان خاموش و ولتاژ آستانه (Threshold voltage) و عوامل مؤثر بر این پارامترها تجزیه و تحلیل می‌گردد. سپس برای ارزیابی اثرات کانال کوتاه، دو پارامتر نوسان زیرآستانه (subthreshold slope) و میزان تنزل سد القاشده ناشی از ولتاژ درین (DIBL) مورد بررسی قرار می‌گیرد. نتایج به‌دست‌آمده برای (subthreshold slope) و (DIBL) به‌ازای مغناطش  به‌ترتیب مقادیرmV/dec 8.24 و 0.064 را نشان می‌دهد که برای کاربردهای ترانزیستوری بسیار مناسب می‌باشد. در نهایت مشخصه‌های آنالوگ (Analog Characteristics) ترانزیستور شبیه‌سازی‌شده، همچون ترارسانایی (Transconductance)، هدایت خروجی (Output conductance)، مقاومت خروجی (Output resistance) و بهره ولتاژ (Gain) به‌دست‌آمده و عوامل مؤثر بر این پارامترها مورد ارزیابی قرار می‌گیرد.

کلیدواژه‌ها


عنوان مقاله [English]

Evaluation of Analog Performance and Short Channel Effect Parameters on Field Effect Transistor based on Topological Insulations

نویسندگان [English]

  • M. Vali 1
  • D. Dideban 2
  • N. Moezi 3
1 Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran
2 Depertment of Electrical and Computer Engineering, University of Kashan, Kashan, Iran
3 Technical and Vocational University, Kashan, Iran
چکیده [English]

In this paper, in order to evaluate new materials for design and simulation of the field effect transistors in nano dimensions, we simulate and investigate the electronic properties of a field effect transistor based of topological insulator. Since the energy gap in the channel region of this transistor is adjustable by a perpendicular magnetic field, first by obtaining the transfer characteristics, we analyze the DC characteristics such as Ion/Ioff ratio and the threshold voltage. Moreover, we evaluate the short channel effects (SCEs) including subthreshold slope (SS) and drain induced barrier lowering (DIBL).The obtained results for (SS) and (DIBL) for m=1 show the values of 8.24mV/dec and 0.064, respectively, which are very suitable for transistor applications. Finally we achieve the analog characteristics of the simulated field effect transistor such as transconductance, output conductance, output resistance and voltage gain and study the parameters affecting these figures of merits.

کلیدواژه‌ها [English]

  • Field effect transistor
  • topological insulator
  • Ion/Ioff ratio
  • threshold voltage
  • short channel effects
  • subthreshold slope
  • analog characteristics
  • transconductance
  • output conductance
  • output resistance
  • voltage gain
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