روش دیاگرام دوپتانسیل برای طراحی گیت اند تک الکترون

نوع مقاله : علمی-پژوهشی

نویسندگان

گروه الکترونیک، دانشکده مهندسی برق - دانشگاه شهید بهشتی- تهران- ایران

چکیده

در این مقاله، روش دیاگرام دو پتانسیل که می‌تواند رفتار فیزیکی ادوات تک الکترون را توصیف کند معرفی شده است. علاوه بر این، از این تکنیک برای طراحی یک گیت AND تک الکترون استفاده شده است. همچنین، تحلیل زمانی گیت پیشنهادی مورد بحث قرار گرفته است. متعاقبا، اصول روش دیاگرام دو پتانسیل توضیح داده شده است. نشان داده شده است که دیاگرام دو پتانسیل قادر به توضیح پدیده انسداد کولنی و تحلیل زمانی ادوات تک الکترون است. مضافا، امکان طراحی و بهینه‌سازی این ادوات را به راحتی فراهم می‌کند. نتایج توسط نرم‌افزار سیمون تأیید شده است و مزایای رویکرد معرفی شده نشان داده شده است.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Bi-Potential Diagram Method for Designing of a Single-Electron AND Gate

نویسندگان [English]

  • Jalal Gholinejad
  • Mohammad Javad Sharifi
Department of Electronic Engineering, Faculty of Electrical Engineering, University of shahid beheshti, Tehran, Iran
چکیده [English]

In this paper, bi-potential diagram method which can describe the physical behavior of single electron devices (SEDs) is introduced. Moreover, this technique is used to design a single electron AND (SEA) gate. Besides, the time analysis of the proposed SEA is discussed. Additionally, the principles of bi-potential diagram method are explained, and the associated point of view is described. It is demonstrated that bi-potential diagram is able to explain coulomb blockade phenomenon and time analysis of SEDs. Furthermore, it provides the ability to design and to optimize SEDs effortlessly. The results are confirmed by SIMON software, and the advantages of the introduced approach are shown.

کلیدواژه‌ها [English]

  • Single-electron
  • AND gate
  • coulomb blockade
  • SIMON

مراجع

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[8] Takada, Shintaro, Hermann Edlbauer, Hugo V. Lepage, Junliang Wang, Pierre-André Mortemousque, Giorgos Georgiou, Crispin HW Barnes et al., “Sound-driven single-electron transfer in a circuit of coupled quantum rails”, Nature communications, vol. 10, no. 1, 2019.
[9] Gholinejad, Jalal, Kian Jafari, and Kambiz Abedi, “Optical XOR Interconnect Gate Based on Symmetric and Asymmetric Plasmonic Modes in IMI Structure Using Modified Kretschmann Configuration”, 2019 2nd West Asian Colloquium on Optical Wireless Communications (WACOWC), IEEE, 2019.
[10] Maillet, Olivier, Paolo A. Erdman, Vasco Cavina, Bibek Bhandari, Elsa T. Mannila, Joonas T. Peltonen, Andrea Mari et al., “Optimal probabilistic work extraction beyond the free energy difference with a single-electron device”, Physical review letters, vol. 122, no. 15, 2019.
[11] Pekola, Jukka P., and Ivan M. Khaymovich, “Thermodynamics in single-electron circuits and superconducting qubits”, Annual Review of Condensed Matter Physics, vol. 10, pp. 193-212, 2019.
[12] Iwata, Yoshiaki, Tomoki Nishimura, Alka Singh, Hiroaki Satoh, and Hiroshi Inokawa, “High-frequency rectifying characteristics of metallic single-electron transistor with niobium nanodots”, Japanese Journal of Applied Physics, vol. 61, no. SC, 2022.
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