مدل تحلیلی جریان الکتریکی مبتنی بر بار با در نظر گرفتن میدان الکتریکی عرضی برای نانو ترانزیستور ماسفت دوگیتی

نویسنده

گروه مهندسی برق - دانشکده فنی و مهندسی - دانشگاه شهرکرد

چکیده

در این مقاله، برای ترانزیستور ماسفت دوگیتی متقارن با آلایش کم با استفاده از انتقال نفوذی و رانشی حامل‌های بار وارونه، یک مدل تحلیلی برای جریان الکتریکی ارائه شده است.  نخست، با استفاده از معادله پواسون یک‌بعدی کانال بلند در جهت عمود بر کانال در حضور حامل‌های متحرک بار، معادله دیفرانسیلی برای بار کانال به‌دست می‌آید که پاسخ آن تغییرات مؤلفه غلظت بار کانال بلند را در امتداد عمود بر کانال نشان می‌دهد. پتانسیل یک‌بعدی کانال بلند با استفاده از این مؤلفه محاسبه می‌شود. مؤلفه دوبعدی پتانسیل کانال کوتاه که ناشی از اثر میدان الکتریکی عرضی در ادوات کانال کوتاه است، از حل معادله لاپلاس به‌دست می‌آید و از طریق آن، مؤلفه دوبعدی تغییرات غلظت بار محاسبه می‌شود. غلظت کلی بار کانال از جمع دو مؤلفه بار کانال بلند و بار کانال کوتاه به‌دست می‌آید. با استفاده از بار کل محاسبه‌شده و قانون گوس در زیر گیت در هر نقطه در امتداد کانال، بار وارونه در آن نقطه محاسبه می‌شود. برخلاف مدل‌های موجود که بار وارونه را فقط با استفاده مؤلفه کانال بلند بار در راستای عمود بر کانال محاسبه می‌کنند، در روش پیشنهادی نشان داده می‌شود که مؤلفه بار دو بعدی کانال کوتاه ناشی از اثر میدان الکتریکی عرضی نیز در راستای عمود بر کانال تغییرات دارد که در محاسبه بار وارونه کل کانال تأثیرگذار خواهد بود و در ادوات کانال کوتاه باید در نظر گرفته شود. تطبیق مناسب بین نتایج حاصل از مدل و نتایج شبیه‌سازی  با نرم‌افزار، دقت مناسب مدل پیشنهادی را نشان می‌دهد.

کلیدواژه‌ها

عنوان مقاله [English]

Analytic Charge-Based Current Model of an Undoped Double-Gate MOSFET Considering the Lateral Electric Field

نویسنده [English]

  • S. A. Hashemi
Faculty of Engineering, Shahrekord University, Shahrekord, Iran
چکیده [English]

An analytical current model has been presented for an undoped symmetric double gate MOSFET based on the drift and diffusion of the inversion charges. First, using the one dimensional long channel (1D) Poisson’s equation perpendicular to the channel with mobile charges, a differential equation for charge of the channel is achieved which its solution gives the variation of the long channel charge concentration perpendicular to the channel. The 1D long channel potential is calculated by this long channel charge. The 2D short channel potential caused by the lateral electric field (which is important in short channel devices) is the solution of the 2D Laplace’s equation. Using this potential, the 2D variation of the short channel charge is extracted. Using the total calculated charge and the Gauss’s law at each point along the channel under the gate, the inversion charge in that point is calculated. Despite the existing models in which the inversion charge is calculated from the long channel charge perpendicular to the channel, in the proposed method it is shown that the 2D short channel charge (introduced by the lateral electric field) varies perpendicular to the channel too which affects calculating the inversion charge and must be taken into account in short channel devices. Finally, using the total inversion charge, the current is calculated. Good agreement between the results of the model and the results obtained by the Atlas software shows the validity of the proposed method.

کلیدواژه‌ها [English]

  • Inversion charge
  • quasi-fermi potential
  • double-gate MOSFET
  • drift-diffusion current
  • poisson’s equation

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