طراحی و شبیه‌سازی فیلترهای چندمسیره با ضریب کیفیت بالا برای استانداردهای GSM و LTE

نوع مقاله : علمی-پژوهشی

نویسندگان

1 فارغ التحصیل کارشناسی ارشد، دانشکده مهندسی برق و کامپیوتر، دانشگاه تبریز، تبریز، ایران

2 دانشیار، دانشکده مهندسی برق و کامپیوتر، دانشگاه تبریز، تبریز، ایران

3 استاد، دانشکده مهندسی برق و کامپیوتر، دانشگاه تبریز، تبریز، ایران

چکیده

در این مقاله، یک فیلتر چندمسیره با ضریب کیفیت بالا برای استانداردهای GSM و LTE ارائه می‌شود. این فیلتر از ترکیب فیلتر پایین‌گذر Sallen-Key، تقویت‌کننده کم نویز و فیلتر چندمسیره ساده طراحی‌شده است. فیلتر مذکور در بازه فرکانسی 0.1 تا 3 گیگاهرتز با پهنای‌باند 20 مگاهرتز کار می‌کند و به ترتیب برای فرکانس‌های 0.9 و 2.7 گیگاهرتز ضریب کیفیتی برابر 45 و 135 دارد. تقویت‌کننده کم نویز بدون سلف با فیدبک مقاومتی، از نوع کلاس AB با جریان بایاس 1 میلی‌آمپر و بهره 35.8 دسی‌بل در بازه فرکانسی صفر تا 4.5 گیگاهرتز با استفاده از فنّاوری 180nm CMOS TSMC طراحی‌شده است. توان مصرفی این تقویت‌کننده 7.2 میلی‌وات و IIP3 برابر6.4dBm می‌باشد. از سوئیچ‌هایی با مقاومت روشن 16 اهم با فنّاوری 180nm CMOS TSMC فیلتر چندمسیره پیشنهادی استفاده شده و برای فرکانس‌های کلاک 0.9 و 2.7 گیگاهرتز با دامنه ورودی 0.1 ولت، دامنه بهره برابر 6.7- و 15.81- دسی‌بل دارد. بهره نهایی این فیلتر 8.37 دسی‌بل، نویز 8.24 دسی‌بل،IIP3 برابر9.2dBm ، توان مصرفی 10 میلی وات و S11 = -26.9dB می‌باشد. در مقایسه با سایر کارهای مشابه، این فیلتر از نظر بهره، بازه فرکانسی، پهنای‌باند و توان مصرفی به‌طور قابل توجهی بهبود یافته است. همچنین نویز و IIP3 آن در محدوده مشابهی با سایر فیلترها قرار دارد. برای ایجاد کلاک این فیلتر از مولد ربعی دو بیتی با 11 ترانزیستور و با استفاده از شمارنده جانسون و فلیپ‌فلاپ‌های نوع D با منطق TSPC استفاده شده است.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Design and Analysis of High Quality Factor N-path Filters for LTE and GSM Standards

نویسندگان [English]

  • Ahmad Najjari 1
  • Siroos Toofan 2
  • Ziaddin Daie Kuzekanani 3
  • Jafar Sobhi 2
1 Electrical and Computer Engineering, Tabriz University, Tabriz, and Iran.
2 Electrical and Computer Enginnering, Tabriz University, Tabriz, and Iran.
3 Electrical and Computer Engineering, Tabriz University, Tabriz, and Iran.
چکیده [English]

The paper introduces a N-path filter with high-quality factors for GSM and LTE standards. The filter is constructed from a Sallen-Key low-pass filter, LNA, and simple N-path filter. It operates in the frequency range of 0.1 to 3 GHz with a 20 MHz bandwidth and exhibits quality factors of 45 and 135 for frequencies of 0.9 and 2.7 GHz, respectively. Furthermore, an inductor-free LNA with resistive feedback is designed. It belongs to the class AB type with a 1 mA current bias and offers 35.4 dB gain in the frequency range of 0 to 4.5 GHz. This amplifier, built using 180nm CMOS TSMC technology, consumes 7.2 mW of power, and an IIP3 of 6.4 dBm. The proposed N-path filter utilizes 16 ohm switches on-resistance with 180nm CMOS TSMC technology, and at clock frequencies of 0.9 and 2.7 GHz with an input amplitude of 0.1 V, it provides gains amplitude of -6.7 dB and -15.81 dB. The overall gain of this filter is 8.37 dB, with a noise of 8.24 dB, an IIP3 of 9.2 dBm, consumes 10 mW of power, and S11 = -26.9 dB. In comparison to similar works, this filter exhibits significant improvements in terms of gain, frequency range, bandwidth, and power consumption while maintaining noise and IIP3 levels consistent with other filters. For clock generation, the filter is designed using a two-bit quadrature generator comprising 11 transistors, alongside a Johnson counter and D-type flip-flops with TSPC logic.

کلیدواژه‌ها [English]

  • N-path filter
  • low noise amplifier
  • Sallen-Key filter
  • clock frequency
  • bandwidth
  • noise

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