مدل سازی تحلیلی ترانزیستورهای موبیلیتی بالای AlGaN/GaN با لایه p در سد

نوع مقاله : علمی-پژوهشی

نویسندگان

دانشگاه فردوسی مشهد

چکیده

در این مقاله مدل سازی تحلیلی دوبعدی یک ترانزیستور موبیلیتی بالا با یک لایه p در لایه سد ارائه شده است. در این مدل توزیع پتانسیل و میدان الکتریکی با حل معادله لاپلاس دوبعدی و به روش پتانسیل معادل و شرایط مرزی مناسب برای دو حالت تخلیه کامل و تخلیه ناکامل به دست آمده است. در روش پتانسیل معادل، بارهای ناحیه تخلیه با یک پتانسیل در سطح لایه passivation جایگزین می شود. این مدل دقت و سادگی مناسبی را سبب می شود و دیدگاه فیزیکی در مورد مشخصه شکست ترانزیستور موبیلیتی بالای AlGaN/GaN با لایه p در سد ارائه می کند. این لایه، میدان الکتریکی زیر گیت در نزدیکی درین را کاهش داده و یک بیشینه میدان جدید ایجاد می کند که سبب می شود توزیع میدان در کانال یکنواخت تر شده و در نتیجه ولتاژ شکست افزایش یابد. وابستگی میدان و پتانسیل در کانال به طول و ضخامت لایه p بررسی شده است. مقایسه نتایج مدل با نتایج شبیه سازی با نرم افزار سیلواکو، دقت مدل را تایید می کند.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Analytical modelling of AlGaN/GaN HEMTs with p-layer in the barrier

نویسندگان [English]

  • Robab Madadi
  • Seyed Ebrahim Hosseini
Electrical Engineering Department, Engineering Faculty, Ferdowsi University of Mashhad, Mashhad, Iran.
چکیده [English]

In this paper, we present a two-dimensional (2D) analytical modelling of a high electron mobility transistor (HEMT) with a p-layer in the barrier layer. In this model the channel potential and electric field distributions on the basis of 2D Laplace equations with Equivalent Potential Method (EPM) and appropriate boundary conditions, under two assumptions of complete depletion/incomplete depletion are derived. The EPM indicates that charges in depletion region can be equivalent to the potential at passivation surface layer. This analytical model shows great simplicity and accuracy. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMT with a p-layer in the barrier. This structure reduces the peak electric field at the gate corner near the drain and a new electric field peak is introduced by electric field modulation, which makes the electric field distribution of channel more uniform and increases the breakdown voltage of the device. The dependence of the channel potential and electric field distributions on length and thickness of the p-layer are investigated. The validity of this model is demonstrated by comparison with the numerical simulations using Silvaco-Atlas device simulator.

کلیدواژه‌ها [English]

  • Analytical model
  • Laplace Equations
  • Equivalent Potential Method (EPM)
  • potential
  • electric field
  • p-layer

مراجع

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