GaAs p-i-n structure Solar Cell efficiency enhancement with Intermediate Energy Band introducing by InAs Quantum Dots in the intrinsic region

Document Type : Original Article

Authors

1 School of Engineering-Emerging Technologies, University of Tabriz, Tabriz, Iran

2 Department of Electrical Engineering, Islamic Azad University, Tehran Science and Research Branch (East Azarbaijan), Tabriz, Iran

Abstract

Today, the intermediate band solar cell with quantum dots is one of the best options to achieve maximum solar energy conversion efficiency. In this paper, two solar cell models have been designed; the first reference model in with p-i-n structure, and the second model contains the InAs quantum dots implanted in the intrinsic region of the structure. By improving the structure and utilizing proper materials in the p-i-n reference cell, the efficiency increased by 34.03%. Then, in a quantum dot-based solar cell structure, 12.55% energy conversion efficiency improvement achieved and so that the obtained efficiency enhanced up to 55.58% by controlling the size and position of the quantum dots. In fact, the intermediate band solar cell provides a high energy conversion efficiency that have not been reported so far.

Keywords

References

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TABRIZ JOURNAL OF ELECTRICAL ENGINEERING
Volume 49, Issue 3 - Serial Number 89
December 2019
Pages 1167-1174

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