Proposal a New Design to Efficiency Enhancement of GaN Light-Emitting Diode Based on Photonic Crystal

Authors

Faculty of Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran

Abstract

Total internal reflection of light is a phenomena which reduces the efficiency of a light emitting diode. In this paper, by using hole type photonic crystals and reducing total internal reflection, it was shown that one can increase the efficiency of a GaN light emitting diode by 2 fold. With help of finite difference time domain method and using 15 periods of air holes with lattice constant, height, length to lattice constant ratio equal to 680 nm, 210 nm and 0.5 respectively, at wavelength of 400 nm the efficiency was increased by 2.1 factor. The simulation and comparing the obtained results for wavelength of 400 and 465 nm, with previous works showed that by using the proposed device it is possible to obtain better efficiencies.

Keywords

References

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TABRIZ JOURNAL OF ELECTRICAL ENGINEERING
Volume 48, Issue 3 - Serial Number 85
November 2018
Pages 1179-1185

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