School of engineering, Damghan University, Damghan, Iran
Abstract
Metal Oxide Semiconductor Field effect Transistor (MOSFET) with Silicon On Insulator (SOI) technology are widely applied in integrated circuits. So, achieving very small scale SOI MOSFET is an important need for developing electronic industry. In this work, a new double gate SOI MOSFET in nano scale is proposed where a SiO2 window is considered in extended drain region between channel, drain and interface of oxide and back gate. The new structure is called OW-DG. The simulation with ATLAS simulator shows that the new transistor reduces off-current, parasitic capacitances and electron temperature, significantly.
Mehrad, M., & Zareiee, M. (2017). A Novel Double Gate SOI MOSFET by Considering a SiO2 Window in Extended Drain Region for Applying in Nano Technology. TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, 47(2), 727-733.
MLA
M. Mehrad; M. Zareiee. "A Novel Double Gate SOI MOSFET by Considering a SiO2 Window in Extended Drain Region for Applying in Nano Technology". TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, 47, 2, 2017, 727-733.
HARVARD
Mehrad, M., Zareiee, M. (2017). 'A Novel Double Gate SOI MOSFET by Considering a SiO2 Window in Extended Drain Region for Applying in Nano Technology', TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, 47(2), pp. 727-733.
VANCOUVER
Mehrad, M., Zareiee, M. A Novel Double Gate SOI MOSFET by Considering a SiO2 Window in Extended Drain Region for Applying in Nano Technology. TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, 2017; 47(2): 727-733.
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