Addressing Half-Select Problem in Single-Ended SRAM Cell

Articles in Press

Document Type : Original Article

Authors

1 Department of Electrical Engineering Ferdowsi University of Mashhad

2 Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Quchan University of Technology, Quchan, Iran

Abstract

In more advanced technologies where the supply voltage is smaller, "half-select problem" becomes more pronounced in SRAM cells. To alleviate this problem without imposing extra power consumption and area, in this paper, a single-ended 10-T structures is proposed. The proposed structure suits low-power applications and because of the cross-point structure, the bit interleaving architecture is allowed to achieve soft error immunity. Since no output node floats during read and write operation, the proposed structure is suitable for working in low operating voltage and high precision circuits. Simulations of a 0.6-V 5-MHz 1-kb SRAM array, confirm that in a 65-nm CMOS technology, the energy required to write a “0” in the single-ended scheme is 53 aJ/kb.

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Tabriz Journal of Electrical Engineering

Articles in Press, Corrected Proof
Available Online from 30 June 2025

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