Bi-Potential Diagram Method for Designing of a Single-Electron AND Gate

Document Type : Original Article

Authors

Department of Electronic Engineering, Faculty of Electrical Engineering, University of shahid beheshti, Tehran, Iran

Abstract

In this paper, bi-potential diagram method which can describe the physical behavior of single electron devices (SEDs) is introduced. Moreover, this technique is used to design a single electron AND (SEA) gate. Besides, the time analysis of the proposed SEA is discussed. Additionally, the principles of bi-potential diagram method are explained, and the associated point of view is described. It is demonstrated that bi-potential diagram is able to explain coulomb blockade phenomenon and time analysis of SEDs. Furthermore, it provides the ability to design and to optimize SEDs effortlessly. The results are confirmed by SIMON software, and the advantages of the introduced approach are shown.

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TABRIZ JOURNAL OF ELECTRICAL ENGINEERING

Articles in Press, Corrected Proof
Available Online from 01 August 2024

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