Analytical modelling of AlGaN/GaN HEMTs with p-layer in the barrier

Document Type : Original Article

Authors

Ferdowsi university of Mashhad

Abstract

In this paper, we present a two-dimensional (2D) analytical modelling of a high electron mobility transistor (HEMT) with a p-layer in the barrier layer. In this model the channel potential and electric field distributions on the basis of 2D Laplace equations with Equivalent Potential Method (EPM) and appropriate boundary conditions, under two assumptions of complete depletion/incomplete depletion are derived. The EPM indicates that charges in depletion region can be equivalent to the potential at passivation surface layer. This analytical model shows great simplicity and accuracy. It gives physical insights into the breakdown characteristics of the AlGaN/GaN HEMT with a p-layer in the barrier. This structure reduces the peak electric field at the gate corner near the drain and a new electric field peak is introduced by electric field modulation, which makes the electric field distribution of channel more uniform and increases the breakdown voltage of the device. The dependence of the channel potential and electric field distributions on length and thickness of the p-layer are investigated. The validity of this model is demonstrated by comparison with the numerical simulations using Silvaco-Atlas device simulator.

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TABRIZ JOURNAL OF ELECTRICAL ENGINEERING

Articles in Press, Corrected Proof
Available Online from 03 July 2024

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