نویسندگان
دانشگاه سمنان - دانشکده مهندسی برق و کامپیوتر
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
In this paper, a new structure of the double gate transistor named DM-DG transistor is presented. In this structure by using HfO2 insulation in the border region of drain and channel, and using of silicon- germanium in the source region the structure is improved, comparing to conventional structures double gate (C-DG). HfO2 insulation area reduces the electric field in the channel and drain region significantly. Because of reducing hot carrier effects and reducing the effect of drain induced barrier lowering (DIBL), the destructive processes in this structure are lower than the conventional double gate structure. In order to avoiding gathering additional holes to the surface of the channel, and reduces the parasitic BJT transistor and floating body effect (FBE) in our structure, we use Silicon- germanium in the source region. In this article 2D simulation results have been shown using ATLAS software and because of the short length of the channel region (20 nm) quantum model has been used.
کلیدواژهها [English]
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