University of Tabriz Tabriz Journal of Electrical Engineering 2008-7799 48 3 2018 11 22 Blockage of Lateral Electric Field from Source/Drain Regions to Improve Short Channel Effects in Nano-SOI device Blockage of Lateral Electric Field from Source/Drain Regions to Improve Short Channel Effects in Nano-SOI device 991 998 8167 FA M. K. Anvarifard Faculty of Technology and Engineering, East of Guilan, University of Guilan, Rudsar- Vajargah, Iran Journal Article 2017 02 11 This paper has presented a new method for the improvement of short channel effects with no complexity in the fabrication flow of Nanoscale silicon-on-insulator (SOI) devices. The basic idea in this paper is realization of a U-shaped oxide using Si₃N₄ material inside the buried oxide and channel region. The lateral electric field lines path from source/drain deviates after meeting with the embedded oxide. As a result, less electric field lines will get the ability to go through the oxide and to reach the channel region. A double ability is caused by increase in effective thermal conduction of the proposed structure in high temperature applications. A comparison between the proposed structure and conventional structure shows that the important parameters such as short channel effects, lattice temperature, electric field, electron mobility and drain conductance have been effectively improved promising the superiority of the proposed device. The structures under study in this paper have been simulated by ATLAS simulator which is one of the commercial products of SILVACO family. This paper has presented a new method for the improvement of short channel effects with no complexity in the fabrication flow of Nanoscale silicon-on-insulator (SOI) devices. The basic idea in this paper is realization of a U-shaped oxide using Si₃N₄ material inside the buried oxide and channel region. The lateral electric field lines path from source/drain deviates after meeting with the embedded oxide. As a result, less electric field lines will get the ability to go through the oxide and to reach the channel region. A double ability is caused by increase in effective thermal conduction of the proposed structure in high temperature applications. A comparison between the proposed structure and conventional structure shows that the important parameters such as short channel effects, lattice temperature, electric field, electron mobility and drain conductance have been effectively improved promising the superiority of the proposed device. The structures under study in this paper have been simulated by ATLAS simulator which is one of the commercial products of SILVACO family. https://tjee.tabrizu.ac.ir/article_8167_74713e1269d0ff0ee14f8b9c1113dc09.pdf