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<ArticleSet>
<Article>
<Journal>
				<PublisherName>University of Tabriz</PublisherName>
				<JournalTitle>Tabriz Journal of Electrical Engineering</JournalTitle>
				<Issn>2008-7799</Issn>
				<Volume>48</Volume>
				<Issue>1</Issue>
				<PubDate PubStatus="epublish">
					<Year>2018</Year>
					<Month>05</Month>
					<Day>22</Day>
				</PubDate>
			</Journal>
<ArticleTitle>Mismatch Tolerant, Wide Bandwidth Current Mirror</ArticleTitle>
<VernacularTitle>Mismatch Tolerant, Wide Bandwidth Current Mirror</VernacularTitle>
			<FirstPage>231</FirstPage>
			<LastPage>236</LastPage>
			<ELocationID EIdType="pii">7461</ELocationID>
			
			
			<Language>FA</Language>
<AuthorList>
<Author>
					<FirstName>H.</FirstName>
					<LastName>Faraji Baghtash</LastName>
<Affiliation>Faculty of Electrical Engineering, Sahand University of Technology, Tabriz, Iran</Affiliation>

</Author>
</AuthorList>
				<PublicationType>Journal Article</PublicationType>
			<History>
				<PubDate PubStatus="received">
					<Year>2016</Year>
					<Month>10</Month>
					<Day>19</Day>
				</PubDate>
			</History>
		<Abstract>In this paper, A new structure for current mirror is presented, which beside the wide operating frequency bandwidth, it shows high resilient against transistor mismatch and technology process uncertainties, as well. The frequency characteristic of proposed current mirror and its robustness against mismatch and process variations are compared with that’s of simple current mirror. To investigate the effects of mismatch on current transfer accuracy, we used Monte Carlo simulations. To compare the robustness of the two current mirror structures, we used standard deviation as a reliable merit. The simulation results prove that the proposed structure operates at least 2.5 times faster than the simple current mirror at standard deviation of 5.5 %. At all the simulations the biasing condition of two structures have chosen to be equal.</Abstract>
			<OtherAbstract Language="FA">In this paper, A new structure for current mirror is presented, which beside the wide operating frequency bandwidth, it shows high resilient against transistor mismatch and technology process uncertainties, as well. The frequency characteristic of proposed current mirror and its robustness against mismatch and process variations are compared with that’s of simple current mirror. To investigate the effects of mismatch on current transfer accuracy, we used Monte Carlo simulations. To compare the robustness of the two current mirror structures, we used standard deviation as a reliable merit. The simulation results prove that the proposed structure operates at least 2.5 times faster than the simple current mirror at standard deviation of 5.5 %. At all the simulations the biasing condition of two structures have chosen to be equal.</OtherAbstract>
		<ObjectList>
			<Object Type="keyword">
			<Param Name="value">Current mirror</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">fast frequency response</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">low current transfer error</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">wide frequency bandwidth</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">process tolerant</Param>
			</Object>
		</ObjectList>
<ArchiveCopySource DocType="pdf">https://tjee.tabrizu.ac.ir/article_7461_4aef6a02790b1cf9d2ebbe882a41ce5a.pdf</ArchiveCopySource>
</Article>
</ArticleSet>
