University of Tabriz Tabriz Journal of Electrical Engineering 2008-7799 47 4 2018 02 20 Explicit Analytic Model of the Potential and threshold Voltage of an Undoped Dual-Material Double-Gate MOSFET Explicit Analytic Model of the Potential and threshold Voltage of an Undoped Dual-Material Double-Gate MOSFET 1759 1769 7023 FA S. A. Hashemi Faculty of Engineering, Shahrekord University, Shahrekord, Iran Journal Article 2016 07 17 An explicit two dimensional (2D) analytical expression for potential of the channel of an undoped Dual-Material Double-Gate MOSFET has been presented which is applicable to asymmetric and symmetric devices. The 2D potential is based on the sum of 1D long channel potential along the channel and 2D potential variation. The 1D potential term depends on intrinsic Debye length and is analytically extracted from 1D Poisson’s equation. The 2D term is achieved by separation of variables method. Despite the existing models which use numerical calculations to achieve the long channel potential, the proposed model has been extracted analytically. For a symmetric device, using the proposed potential model and by means of virtual cathode, analytic expressions for the threshold voltage and drain induced barrier lowering have been derived. Simulations show good agreement between the results of the proposed model and those of TCAD software which guarantees the accuracy of the proposed model. An explicit two dimensional (2D) analytical expression for potential of the channel of an undoped Dual-Material Double-Gate MOSFET has been presented which is applicable to asymmetric and symmetric devices. The 2D potential is based on the sum of 1D long channel potential along the channel and 2D potential variation. The 1D potential term depends on intrinsic Debye length and is analytically extracted from 1D Poisson’s equation. The 2D term is achieved by separation of variables method. Despite the existing models which use numerical calculations to achieve the long channel potential, the proposed model has been extracted analytically. For a symmetric device, using the proposed potential model and by means of virtual cathode, analytic expressions for the threshold voltage and drain induced barrier lowering have been derived. Simulations show good agreement between the results of the proposed model and those of TCAD software which guarantees the accuracy of the proposed model. https://tjee.tabrizu.ac.ir/article_7023_0c52823b82e233a127bd06ce6679f742.pdf