University of Tabriz Tabriz Journal of Electrical Engineering 2008-7799 47 2 2017 06 22 A Novel Double Gate SOI MOSFET by Considering a SiO2 Window in Extended Drain Region for Applying in Nano Technology A Novel Double Gate SOI MOSFET by Considering a SiO2 Window in Extended Drain Region for Applying in Nano Technology 727 733 5574 FA M. Mehrad School of engineering, Damghan University, Damghan, Iran M. Zareiee School of engineering, Damghan University, Damghan, Iran Journal Article 2016 03 30 Metal Oxide Semiconductor Field effect Transistor (MOSFET) with Silicon On Insulator (SOI) technology are widely applied in integrated circuits. So, achieving very small scale SOI MOSFET is an important need for developing electronic industry. In this work, a new double gate SOI MOSFET in nano scale is proposed where a SiO₂ window is considered in extended drain region between channel, drain and interface of oxide and back gate. The new structure is called OW-DG. The simulation with ATLAS simulator shows that the new transistor reduces off-current, parasitic capacitances and electron temperature, significantly. Metal Oxide Semiconductor Field effect Transistor (MOSFET) with Silicon On Insulator (SOI) technology are widely applied in integrated circuits. So, achieving very small scale SOI MOSFET is an important need for developing electronic industry. In this work, a new double gate SOI MOSFET in nano scale is proposed where a SiO₂ window is considered in extended drain region between channel, drain and interface of oxide and back gate. The new structure is called OW-DG. The simulation with ATLAS simulator shows that the new transistor reduces off-current, parasitic capacitances and electron temperature, significantly. https://tjee.tabrizu.ac.ir/article_5574_e9a19c6f3509600670128ff3ef9eb1e2.pdf