University of Tabriz Tabriz Journal of Electrical Engineering 2008-7799 54 1 2024 04 20 An FVF-Based Gm-Enhanced fully balanced Preamplifier An FVF-Based Gm-Enhanced fully balanced Preamplifier 111 119 16976 10.22034/tjee.2023.16976 FA H. Faraji Baghtash Faculty of Electrical Engineering, Sahand University of Technology, Sahand New Town, Tabriz 5331817634, Iran M. Kargar Iranian Space Research Center (ISRC), Tehran, Iran Journal Article 2023 03 12 A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of 150nW from a 0.6V supply voltage. <br />The Spectre Post-layout simulations with TSMC 180nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of 141.5dB and 3-dB frequency bandwidth of 2.4kHz at 60dB closed-loop configuration. The load capacitance is set to be 5pF. The proposed structure also delivers high CMRR and PSRR values of 148.3dB and 153.7dB, respectively. A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of 150nW from a 0.6V supply voltage. <br />The Spectre Post-layout simulations with TSMC 180nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of 141.5dB and 3-dB frequency bandwidth of 2.4kHz at 60dB closed-loop configuration. The load capacitance is set to be 5pF. The proposed structure also delivers high CMRR and PSRR values of 148.3dB and 153.7dB, respectively. FVF OTA low power low voltage CCII preamplifier https://tjee.tabrizu.ac.ir/article_16976_14a184b42f62d3e014114ee9622e334a.pdf