University of Tabriz Tabriz Journal of Electrical Engineering 2008-7799 51 2 2021 07 23 Modeling of the non-uniform distributed GaN QDs based Infrared Photodetector Modeling of the non-uniform distributed GaN QDs based Infrared Photodetector 205 211 13768 FA H. Fazlalipour Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran 14778-93855, Iran A. Asgari Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 55165-163, Iran Gh. Darvish عضو هیات علمی تمام وقت Journal Article 2020 11 16 In this paper, pyramidal shaped GaN-based quantum dots (QDs) with different sizes in each layer, surrounded by  is proposed for infrared photodetector mainly to enhance the detector performance. In this model, we are considering the QDs sizes’ distribution to calculate all parameters instead of using Poisson distribution to express the inhomogeneous broadening just in the absorption coefficient. To model the performance of the devices, the Schrödinger equation has been solved using the effective mass approximation; then, the absorption coefficient, the gain, the responsivity, the electron mobility, the dark current, and the detectivity as a function of temperature for different biases are obtained. Significant improvements in the optical behavior are seen in the modeled results at T = 220 K. In this paper, pyramidal shaped GaN-based quantum dots (QDs) with different sizes in each layer, surrounded by  is proposed for infrared photodetector mainly to enhance the detector performance. In this model, we are considering the QDs sizes’ distribution to calculate all parameters instead of using Poisson distribution to express the inhomogeneous broadening just in the absorption coefficient. To model the performance of the devices, the Schrödinger equation has been solved using the effective mass approximation; then, the absorption coefficient, the gain, the responsivity, the electron mobility, the dark current, and the detectivity as a function of temperature for different biases are obtained. Significant improvements in the optical behavior are seen in the modeled results at T = 220 K. https://tjee.tabrizu.ac.ir/article_13768_7f71722c94cb9f91e56a0f14df478a29.pdf